Tim7785-4ul
WebTIM7785-45UL Toshiba RF JFET Transistors TRANSISTOR,GAAS FET INTERNALLY MATCHED,8GHZ,23W datasheet, inventory, & pricing. WebThe TIM7179-4UL is available in MODULE Package, is part of the Module. TIM7785-16SL with EDA / CAD Models manufactured by TOSHIBA. The TIM7785-16SL is available in MODULE Package, is part of the Module. Technical Parameters Manufacturer TOSHIBA Packing Tape & Reel (TR)/Cut Tape (CT)/Tray/Tube RoHs Status Lead free/RoHS …
Tim7785-4ul
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WebHIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz, TIM7785-4UL_09 Datasheet, TIM7785-4UL_09 circuit, TIM7785-4UL_09 data sheet : TOSHIBA, alldatasheet, … WebTIM7785-60SL: 156Kb / 4P: IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level TIM7785-6UL: 47Kb / 4P: MICROWAVE POWER GaAs FET TIM7785-6UL: 144Kb / 4P: HIGH …
Webmicrowave semiconductor tim7785-4ul technical data features high power broad band internally matched fet p1db=36.5dbm at 7.7ghz to 8.5ghz high gain hermetically sealed … WebTIM7785-6UL: 144Kb / 4P: HIGH POWER P1dB=38.5dBm at 7.7GHz to 8.5GHz: Mitsubishi Electric Sem... MGFC40V7785B: 101Kb / 2P: 7.7-8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET MGFC42V7785A: 104Kb / 2P: 7.7-8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET: Toshiba Semiconductor: TIM7785-4UL: 144Kb / 4P: HIGH …
WebFind the best pricing for Toshiba TIM7785-4UL by comparing bulk discounts per 1,000. Octopart is the world’s source for Toshiba TIM7785-4UL availability, pricing, and … WebMICROWAVE POWER GaAs FET, TIM7785-6UL Datasheet, TIM7785-6UL circuit, TIM7785-6UL data sheet : TOSHIBA, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. Electronic Components Datasheet Search English Chinese: German: …
WebDefense & Electronic Systems Microwave Semiconductor C-band Internally Matched Power GaAs FETs C-band Internally Matched Power GaAs FETs C-band（4~8GHz）GaAs …
WebFeatures, Applications: FEATURES BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE. CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel … st peter\u0027s rc high school wiganWebBuy TIM7785-4UL TOSHIBA , Learn more about TIM7785-4UL MICROWAVE POWER GaAs FET, View the manufacturer, and stock, and datasheet pdf for the TIM7785-4UL at Jotrin Electronics. Sign In Or Register st peter\u0027s rc high school term datesWebHisiwell Technology focus in Microwave millimeter devices, RF devices, Terahertz devices and IC, etc., to provide you with enthusiasm, professional, efficient service. st peter\u0027s rc high school \u0026 sixth form centrehttp://www.hisiwell.com/index.php?m=content&c=index&a=lists&catid=9 st peter\u0027s r.c. primary schoolWebtim7785-12ul: カテゴリー: rfと ... tim7179-4ul: cバンドパワーgaas imft. tim7785-25ul: cバンドパワーgaas imft. tim7785-30sl: cバンドパワーgaas imft rothes footballWeb2 TIM7785-4UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V15 Gate-Source Voltage VGS V-5 Drain Current IDS A3.5 Total Power Dissipation (Tc= 25 °C)PT W23 Channel Temperature Tch °C 175 Storage Tstg °C -65 ∼ +175 PACKAGE OUTLINE (2-11D1B) st peter\u0027s rc high school longsightWeb8.5GHZ Datasheet(PDF) - Toshiba Semiconductor - TIM7785-12UL_09 Datasheet, HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz, Toshiba Semiconductor - TIM7785-4UL_09 Datasheet, Toshiba Semiconductor - TIM7785-25UL Datasheet. Electronic Components Datasheet Search English Chinese: German: Japanese: Russian: Korean ... rothes florist